Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor-Reference-Cited by-同舟云学术

Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor

Published:2019 Issue:4 Volume:7 Page:1006-1013
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Hyun-Woo¹²³⁴⁵,Kwon Sera¹²³⁴,Song Aeran¹²³⁴,Choi Dukhyun⁵⁶⁷⁸⁴^ORCID,Chung Kwun-Bum¹²³⁴^ORCID

Affiliation:

1. Division of Physics and Semiconductor Science

2. Dongguk University

3. Seoul

4. Korea

5. Department of Mechanical Engineering

6. School of Engineering

7. Kyung Hee University

8. Yongin

Abstract

The key to full understanding of the degradation mechanism of oxide thin film transistors (Ox-TFTs) by gate bias stress is to investigate dynamical changes of the electron trap site at the channel region while a real-time gate bias is applied to the actual thin film transistor (TFT) structure.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC03585G

Reference25 articles.

1. A wearable and highly sensitive pressure sensor with ultrathin gold nanowires

2. Sophisticated skin

3. Metal oxide semiconductor thin-film transistors for flexible electronics