Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdO x Bilayer Gate Dielectrics
Author:
Affiliation:
1. School of Materials Science and Engineering, Anhui University, Hefei, China
2. School of Materials Science and Engineering and the School of Integrated Circuits, Anhui University, Hefei, China
Funder
National Natural Science Foundation of China
Open fund for Discipline Construction, Institute of Physical Science and Anhui Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9780469/09756635.pdf?arnumber=9756635
Reference32 articles.
1. Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and Inverters
2. Low-frequency noise in high performance and stability of Li-doped ZnO thin-film transistors
3. Band offsets and electrical stability characterization of Zr-doped ZnO thin-film transistors with a Gd2O3 gate insulator
4. Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation
5. Electrical properties of Al2O3–HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm
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