Low-frequency noise in high performance and stability of Li-doped ZnO thin-film transistors-Reference-Cited by-同舟云学术

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Low-frequency noise in high performance and stability of Li-doped ZnO thin-film transistors

Published:2020-07-27 Issue:41 Volume:53 Page:415110
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Abliz Ablat^ORCID,Wan Da,Duan Haiming,Yang Linyu,Mamat Mamatrishat^ORCID,Chen Henglei,Xu Lei

Funder

Natural Science Foundation of Xinjiang Uygur Autonomous Region of China

National Natural Science Foundation of China

Doctoral Program Foundation of Xinjiang University

Project supported by State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China.

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/ab9ce3/pdf

Reference43 articles.

1. Metal oxides for optoelectronic applications

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering

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1. Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment;ACS Applied Electronic Materials;2023-11-08

2. Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits;Journal of Materials Science & Technology;2023-10

3. Performance and reliability improvement of all-solution processed indium zinc oxide thin-film transistor by UV irradiation treatment;Journal of Physics D: Applied Physics;2023-07-12

4. Enhanced Hall Mobility and d0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD;Electronic Materials Letters;2023-05-12

5. Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration;IEEE Transactions on Electron Devices;2022-11

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