Band offsets and electrical stability characterization of Zr-doped ZnO thin-film transistors with a Gd2O3 gate insulator-Reference-Cited by-同舟云学术

Band offsets and electrical stability characterization of Zr-doped ZnO thin-film transistors with a Gd2O3 gate insulator

Published:2014-04 Issue: Volume:118 Page:20-24
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chiu Hsien-Chin,Wang Hsiang-Chun,Luo Yi-Cheng,Huang Fan-Hsiu,Kao Hsuan-Ling,Hsueh Kuang-Po

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

2. Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

3. Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

4. Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping

5. Instability of an Amorphous Indium Gallium Zinc Oxide TFT under Bias and Light Illumination

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