Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4795127
Reference18 articles.
1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
4. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
5. Dependence of channel thickness on the performance of In2O3thin film transistors
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1. Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects;ACS Applied Electronic Materials;2023-07-11
2. Characteristics Improvement of Ingazno Thin-Film Transistors Using an Interlayer with Controlled Oxygen Vacancies;SSRN Electronic Journal;2022
3. Effect of Barrier Controlled Electrodes on Characteristics of Ingazno Thin-Film Transistors Using an Interlayer with Modulated Oxygen Defects;SSRN Electronic Journal;2022
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