Thin TiOxlayer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory
Author:
Funder
Natural Science Foundation of Tianjin City
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C6NR08470B
Reference26 articles.
1. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
2. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
3. Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
5. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
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