Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition-Reference-Cited by-同舟云学术

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

Published:2014 Issue:36 Volume:16 Page:8500-8507
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Wenliang¹²³,Yang Weijia¹²³,Liu Zuolian¹²³,Lin Yunhao¹²³,Zhou Shizhong¹²³,Qian Huirong¹²³,Wang Haiyan¹²³,Lin Zhiting¹²³,Zhang Shuguang¹²³,Li Guoqiang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640, China

4. Department of Electronic Materials

5. School of Materials Science and Engineering

Abstract

Homogeneous and high-quality GaN films with a RMS thickness inhomogeneity of less than 2.8% were grown on an AlN buffer layer using pulsed laser deposition and optimized laser rastering program.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE00948G

Reference53 articles.

1. Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

2. Growth of single crystalline GaN on silver mirrors

3. Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers

4. Epitaxial growth of GaN on copper substrates

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An investigation on GaN/ porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid;Sensors and Actuators B: Chemical;2022-09

2. Invalidation of the acquisition of internal quantum efficiency using temperature-dependent photoluminescence in InGaN quantum wells with high threading dislocation density;Journal of Physics D: Applied Physics;2022-02-15

3. Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy;Semiconductors;2021-12

4. Simulation study on the diversity and characteristics of twin structures in GaN;Superlattices and Microstructures;2021-11

5. HVPE fabrication of GaN sub-micro pillars on preliminarily treated Si(001) substrate;Optical Materials;2021-07