Growth of single crystalline GaN on silver mirrors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2815924
Reference23 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Study of GaN light-emitting diodes fabricated by laser lift-off technique
4. Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates
5. Growth of GaN on NdGaO3 substrates by pulsed laser deposition
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1. Invalidation of the acquisition of internal quantum efficiency using temperature-dependent photoluminescence in InGaN quantum wells with high threading dislocation density;Journal of Physics D: Applied Physics;2022-02-15
2. Low-temperature direct growth of GaN epitaxial film on Cu substrate with sharp and abrupt hetero-interface;Materials Letters;2019-10
3. GaN on sapphire substrates for visible light-emitting diodes;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018
4. Effects of substrate and annealing on GaN films grown by plasma-assisted molecular beam epitaxy;Surface and Coatings Technology;2017-06
5. Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique;APL Materials;2016-07
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