A steep-switching impact ionization-based threshold switching field-effect transistor-Reference-Cited by-同舟云学术

A steep-switching impact ionization-based threshold switching field-effect transistor

Published:2023 Issue:12 Volume:15 Page:5771-5777
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kang Chanwoo¹,Choi Haeju¹,Son Hyeonje¹,Kang Taeho¹,Lee Sang-Min¹,Lee Sungjoo¹²³^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea

2. Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Korea

3. Department of Nano Engineering, Sungkyunkwan University, Suwon 16419, Korea

Abstract

A steep switching transistor (subthreshold swing, SS ∼32.8 mV dec−1) with low dielectric injection efficiency (ΔIGS/ΔIDS ∼10−6 is constructed by connecting an MoS2 FET and a WSe2 impact-ionisation based threshold switch.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR06547A

Reference34 articles.

1. The End of Moore's Law: A New Beginning for Information Technology

2. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

5. Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

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