Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy-Reference-Cited by-同舟云学术

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Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy

Published:2016 Issue:5 Volume:18 Page:744-753
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Kushvaha S. S.,Senthil Kumar M.,Yadav B. S.,Tyagi Pawan K.,Ojha Sunil,Maurya K. K.,Singh B. P.

Funder

Council for Scientific and Industrial Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CE/C5CE02257F

Reference42 articles.

1. Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

2. Nitride-based semiconductors for blue and green light-emitting devices

3. High efficient GaN-based laser diodes with tunnel junction

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

5. Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

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2. High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE;Sensors and Actuators A: Physical;2024-04

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4. Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20);Journal of Materials Research;2022-11-28

5. Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire;Applied Physics A;2022-10-20

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