Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy
Author:
Affiliation:
1. Korea Basic Science Institute
2. Daejeon
3. Republic of Korea
4. Department of Science Education
5. Jeonju University
6. Analytical Lab of Advanced Ferroelectric Crystals
Abstract
We report the growth of a 3.5 mm-thick bulk GaN layer using a stress-engineered homoepitaxy method without any external processes.
Funder
Ministry of Education
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA06438E
Reference24 articles.
1. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes
2. A GaN bulk crystal with improved structural quality grown by the ammonothermal method
3. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
4. Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times
5. Direct growth of freestanding GaN on C-face SiC by HVPE
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy;Laser & Photonics Reviews;2024-04-20
2. Morphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy;Journal of Crystal Growth;2024-02
3. Progress in GaN Single Crystals: HVPE Growth and Doping;Journal of Inorganic Materials;2023
4. Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene;Journal of Alloys and Compounds;2020-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3