Author:
Hashimoto Tadao,Wu Feng,Speck James S.,Nakamura Shuji
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Reference24 articles.
1. Schmidt, M. C. et al. High power and high external efficiency m-plane InGaN light emitting diodes. Jpn. J. Appl. Phys. 46, L126–L128 (2007).
2. Tyagi, A. et al. High brightness violet InGaN/GaN light emitting diodes on semipolar bulk GaN substrates. Jpn. J. Appl. Phys. 46, L129–L131 (2007).
3. Okamoto, K., Ohta, H., Chichibu, S. F., Ichihara, J. & Takasu, H. Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes. Jpn. J. Appl. Phys. 46, L187–L189 (2007).
4. Schmidt, M. C. et al. Demonstration of nonpolar m-plane InGaN/GaN laser diodes. Jpn. J. Appl. Phys. 46, L190–L191 (2007).
5. Callahan, M. J. et al. Growth of GaN crystals under ammonothermal conditions. Mater. Res. Soc. Symp. Proc. 798, Y2.10.1–Y2.10.6 (2004).
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