Direct growth of freestanding GaN on C-face SiC by HVPE
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep10748.pdf
Reference40 articles.
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3. Oshima, Y., Eri, T., Shibata, M., Sunakawa, H. & Usui, A. Fabrication of Freestanding GaN Wafers by Hydride Vapor‐Phase Epitaxy with Void‐Assisted Separation. Phys. Status Solidi A 194, 554–558 (2002).
4. Morkoç, H. Handbook of Nitride Semiconductors and Devices (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008).
5. Wang, F. C., Cheng, C. L., Chen, Y. F., Huang, C. F. & Yang, C. C. Residual thermal strain in thick GaN epifilms revealed by cross-sectional Raman scattering and cathodoluminescence spectra. Semicond. Sci. Tech. 22, 896 (2007).
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