Residual thermal strain in thick GaN epifilms revealed by cross-sectional Raman scattering and cathodoluminescence spectra-Reference-Cited by-同舟云学术

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Residual thermal strain in thick GaN epifilms revealed by cross-sectional Raman scattering and cathodoluminescence spectra

Published:2007-07-12 Issue:8 Volume:22 Page:896-899
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang F C,Cheng C L,Chen Y F,Huang C F,Yang C C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Emerging gallium nitride based devices

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films

4. Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

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1. Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium;Applied Surface Science;2022-03

2. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates;CrystEngComm;2022

3. FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry;Journal of Materials Science: Materials in Electronics;2021-05-04

4. Study on the stress and mechanism of self-separated GaN grown by Na-flux method;Applied Physics Express;2021-02-04

5. Study on the Variation of Surface Morphology and Residual Stress Under Various Thermal Annealing Conditions with Bulk GaN Substrates Grown by HVPE;Electronic Materials Letters;2020-11-02

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