Effect of energy per atom (E/n) on the Ar gas cluster ion beam (Ar-GCIB) and O2+ cosputter process-Reference-Cited by-同舟云学术

Effect of energy per atom (E/n) on the Ar gas cluster ion beam (Ar-GCIB) and O2+ cosputter process

Published:2019 Issue:10 Volume:144 Page:3323-3333
ISSN:0003-2654
Container-title:The Analyst
language:en
Short-container-title:Analyst

Author:

Wang Shin-Kung¹²³⁴,Chang Hsun-Yun⁵⁶⁷⁴,Chu Yi-Hsuan¹²³⁴,Kao Wei-Lun¹²³⁴,Wu Chen-Yi¹²³⁴^ORCID,Lee Yi-Wei¹²³⁴,You Yun-Wen⁵⁶⁷⁴,Chu Kuo-Jui¹²³⁴,Hung Shu-Hang¹²³⁴,Shyue Jing-Jong¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. National Taiwan University

3. Taipei 106

4. Taiwan

5. Research Center for Applied Science

6. Academia Sinica

7. Taipei 115

Abstract

With optimization, GCIB-O₂⁺ cosputter is a promising technique for preserving molecular structures during ion sputtering and successfully profiled soft materials.

Funder

Academia Sinica

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrochemistry,Spectroscopy,Environmental Chemistry,Biochemistry,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/AN/C8AN02452A

Reference53 articles.

1. Atomic and Molecular Imaging at the Single-Cell Level with TOF-SIMS

2. Improved Molecular Imaging in Rodent Brain with Time-of-Flight-Secondary Ion Mass Spectrometry Using Gas Cluster Ion Beams and Reactive Vapor Exposure