Quantifying thermal transport in buried semiconductor nanostructures via cross-sectional scanning thermal microscopy-Reference-Cited by-同舟云学术

Quantifying thermal transport in buried semiconductor nanostructures via cross-sectional scanning thermal microscopy

Published:2021 Issue:24 Volume:13 Page:10829-10836
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Spièce Jean¹,Evangeli Charalambos¹^ORCID,Robson Alexander J.¹,El Sachat Alexandros²,Haenel Linda³,Alonso M. Isabel⁴^ORCID,Garriga Miquel⁴^ORCID,Robinson Benjamin J.¹⁵^ORCID,Oehme Michael³^ORCID,Schulze Jörg³,Alzina Francesc²,Sotomayor Torres Clivia²⁶,Kolosov Oleg V.¹⁵^ORCID

Affiliation:

1. Physics Department, Lancaster University, LA1 4YB, UK

2. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain

3. University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany

4. Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain

5. Material Science Institute, Lancaster University, Lancaster, LA1 4YB, UK

6. ICREA, Passeig Lluis Companys 23, E-08010 Barcelona, Spain

Abstract

A unique sample polishing technique and scanning thermal microscopy were combined to quantify with few nm resolution the thermal conductance and local thermal conductivity of complex multilayer nanostructures.

Funder

European Commission

Engineering and Physical Sciences Research Council

Royal Society

Ministerio de Economía y Competitividad

Generalitat de Catalunya

Faraday Institution

Ministerio de Ciencia e Innovación

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science