Enhanced photo-response performance of Cu2O-based graded heterojunction optoelectronic devices with a Ga2O3 buffer layer-Reference-Cited by-同舟云学术

Enhanced photo-response performance of Cu₂O-based graded heterojunction optoelectronic devices with a Ga₂O₃ buffer layer

Published:2022 Issue:14 Volume:10 Page:5505-5513
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xiao Meng¹²,Dong Kailian¹²,Liang Jiwei¹²,He Jin¹,Fang Guojia¹²^ORCID

Affiliation:

1. Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, Hubei, China

2. Shenzhen Institute, Wuhan University, Shenzhen 518055, Guangdong, China

Abstract

Heterojunctions with gradient energy bands confirmed via Kelvin probe force microscopy (KPFM) are confirmed to be effective in accelerating charge transport and suppressing carrier recombination in Cu2O-based-film photodetector and solar cell devices.

Funder

Shenzhen Fundamental Research Program

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00652A

Reference41 articles.

1. Nanostructured Photodetectors: From Ultraviolet to Terahertz