Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering-Reference-Cited by-同舟云学术

Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

Published:2018 Issue:61 Volume:8 Page:34817-34822
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhong Wei¹²³⁴,Li Guoyuan¹²³⁴,Lan Linfeng⁵²³⁴^ORCID,Li Bin¹²³⁴,Chen Rongsheng¹²³⁴^ORCID

Affiliation:

1. School of Electronic and Information Engineering

2. South China University of Technology

3. Guangzhou

4. China

5. School of Materials Science and Engineering

Abstract

Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA06692B

Reference42 articles.

1. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2. Modeling and simulation of polycrystalline ZnO thin-film transistors

3. Amorphous oxide channel TFTs

4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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