Tuning the Schottky contacts at the graphene/WS2 interface by electric field-Reference-Cited by-同舟云学术

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Tuning the Schottky contacts at the graphene/WS2 interface by electric field

Published:2017 Issue:47 Volume:7 Page:29350-29356
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Fang¹²³⁴^ORCID,Li Wei⁵⁶⁷⁴⁸,Ma Yaqiang⁸⁹¹⁰⁴^ORCID,Tang Yanan¹¹¹²¹³⁴,Dai Xianqi⁸⁹¹⁰⁴¹¹

Affiliation:

1. College of Electric and Mechanical Engineering

2. Pingdingshan University

3. Pingdingshan 467000

4. China

5. School of Mathematics & Physics

6. Henan University of Urban Construction

7. Pingdingshan 467036

8. College of Physics and Materials Science

9. Henan Normal University

10. Xinxiang 453007

11. Department of Physics

12. Zhengzhou Normal University

13. Zhengzhou

Abstract

Evolution of Schottky barriers of Φ_Bp and Φ_Bn in graphene/WS₂ heterostructures as a function of external electric field.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA00589J

Reference54 articles.

1. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

2. First-principles studies on substitutional doping by group IV and VI atoms in the two-dimensional arsenene

3. Tunable electronic structures in the two-dimension SnX 2 (X = S and Se) nanosheets by stacking effects

4. Characteristics of n- and p-type dopants in 1T-HfS2 monolayer

5. Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

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