Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites-Reference-Cited by-同舟云学术

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

Published:2017 Issue:37 Volume:5 Page:9799-9805
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Guilin¹²³⁴,Zhang Peng¹²³⁴,Pan Lulu¹²³⁴,Qi Lin¹²³⁴,Yu Fucheng⁵⁶⁷⁴,Gao Cunxu¹²³⁴⁸^ORCID

Affiliation:

1. Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education

2. Lanzhou University

3. Lanzhou 730000

4. P. R. China

5. School of Material Science and Engineering

6. Lanzhou University of Technology

7. Lanzhou

8. Key Laboratory of Special Function Materials and Structure Design

Abstract

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO₃ nanosheets and polyvinylpyrrolidone composites.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03481D

Reference35 articles.

1. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

2. Memristive devices for computing

3. Phase-change materials for rewriteable data storage

4. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

5. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

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