Effect of stoichiometry on the resistive switching characteristics of STO resistive memory-Reference-Cited by-同舟云学术

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

Published:2023 Issue:31 Volume:11 Page:10651-10659
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hsu Chih-Chieh¹²^ORCID,Cheng Chao-Wen¹,Wen Xiu-Ming¹^ORCID,Joodaki Mojtaba³

Affiliation:

1. Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan

2. Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan

3. School of Computer Science and Engineering, Constructor University, Bremen, 28759, Germany

Abstract

Herein, we modify the stoichiometry of an SrTiOx resistive switching layer to fabricate a memristor with a high ON/OFF current ratio and high data retention capability.

Funder

National Science and Technology Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC01847D

Reference72 articles.

1. A comprehensive investigation of MoO3 based resistive random access memory

2. Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM

3. Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system

4. Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN x ‐Based Memristor

5. Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

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