Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth-Reference-Cited by-同舟云学术

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Demonstration of high-performance STO-based WORM devices controlled by oxygen-vacancies and metal filament growth

Published:2024 Issue:23 Volume:12 Page:8418-8425
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hsu Chih-Chieh¹^ORCID,Wen Xiu-Ming¹^ORCID,Xiao Kai-Zer¹,Jhang Wun-Ciang²,Joodaki Mojtaba³

Affiliation:

1. Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan

2. Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan

3. School of Computer Science and Engineering, Constructor University, Bremen, 28759, Germany

Abstract

This study realizes high-performance Ti/STO/n+-Si VCM-type and Ag/STO/n+-Si ECM-type resistive memories with ILRS/IHRS ratios of 107 and 108.

Funder

National Science and Technology Council

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01319K

Reference52 articles.

1. Resistive Switching Crossbar Arrays Based on Layered Materials

2. Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor

3. CogniFiber: Harnessing Biocompatible and Biodegradable 1D Collagen Nanofibers for Sustainable Nonvolatile Memory and Synaptic Learning Applications

4. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

5. Multiple resistive switching behaviours of CH3NH3PbI3 perovskite film with different metal electrodes

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