Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires-Reference-Cited by-同舟云学术

Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires

Published:2019 Issue:22 Volume:11 Page:10932-10943
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Johar Muhammad Ali¹²³⁴,Song Hyun-Gyu⁵⁶⁷⁴,Waseem Aadil¹²³⁴,Kang Jin-Ho¹²³⁴,Ha Jun-Seok⁸²³⁴,Cho Yong-Hoon⁵⁶⁷⁴^ORCID,Ryu Sang-Wan¹²³⁴⁸^ORCID

Affiliation:

1. Department of Physics

2. Chonnam National University

3. Gwangju 61186

4. Republic of Korea

5. Department of Physics and KI for the NanoCentury

6. Korea Advanced Institute of Science and Technology

7. Daejeon 34141

8. Optoelectronics Convergence Research Center

Abstract

The growth of semi-polar (112̄2) GaN/InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR02823D

Reference49 articles.

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4. Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires

5. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics

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