Facile growth of density- and diameter-controlled GaN nanobridges and their photodetector application-Reference-Cited by-同舟云学术

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Facile growth of density- and diameter-controlled GaN nanobridges and their photodetector application

Published:2017 Issue:45 Volume:5 Page:11879-11884
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kang Jin-Ho¹²³⁴⁵,Johar Muhammad Ali¹²³,Alshehri Bandar⁶⁷⁸,Dogheche Elhadj⁶⁷⁸,Ryu Sang-Wan¹²³^ORCID

Affiliation:

1. Department of Physics, Chonnam National University

2. Gwangju 61186

3. Republic of Korea

4. Department of Electrical Engineering, Yale University

5. New Haven

6. Institute of Electronics, Microelectronics & Nanotechnology (IEMN-CNRS)

7. Le Mont Houy 59309 Valenciennes

8. France

Abstract

The growth of arrayed GaN nanobridges (NBs) and their application in a photodetector (PD) were studied.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02619F

Reference27 articles.

1. Nanowire photonics

2. Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

3. Small-scale effect on the piezoelectric potential of gallium nitride nanowires

4. Size-dependent persistent photocurrent and surface band bending inm-axial GaN nanowires

5. Enhanced performance of a GaN piezoelectric nanogenerator with an embedded nanoporous layer via the suppressed carrier screening effect

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