Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
Author:
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961680
Reference49 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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5. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
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