Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires-Reference-Cited by-同舟云学术

Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires

Published:2014-12-11 Issue:1 Volume:15 Page:332-338
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Erhard N.¹²,Sarwar A. T. M. Golam³,Yang F.,McComb D. W.,Myers R. C.³,Holleitner A. W.¹²

Affiliation:

1. Walter Schottky Institut and Physik-Department, Technische Universität München, D-85748 Garching, Germany

2. Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 München, Germany

3. Department of Electrical and Computer Engineering and ∥Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States

Funder

Division of Materials Research

European Research Council

Nanosystems Initiative Munich

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl503616w

Reference37 articles.

1. Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

2. Coaxial Group III−Nitride Nanowire Photovoltaics

3. Surface plasmon coupling effect in an InGaN∕GaN single-quantum-well light-emitting diode

4. InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact

5. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An inverted T-shaped vertical tunneling InN/In Ga1-N heterojunction TFET with high current ratio;Micro and Nanostructures;2024-03

2. Surface steered aligned gradient inorganic lead halide perovskite CsPbBr I nanowires for use in photodetectors;Applied Surface Science;2023-04

3. Flexoelectricity in composition-graded InGaN nanowires;Journal of Physics D: Applied Physics;2021-08-25

4. Tunable local and global piezopotential properties of graded InGaN nanowires;Nano Energy;2021-08

5. Recent progress in group III-nitride nanostructures: From materials to applications;Materials Science and Engineering: R: Reports;2020-10