Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters-Reference-Cited by-同舟云学术

Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

Published:2022 Issue:23 Volume:24 Page:4251-4255
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Jiaming¹,Xu Fujun¹^ORCID,Lang Jing¹,Fang Xuzhou¹,Wang Liubing¹,Guo Xueqi¹,Ji Chen¹,Kang Xiangning¹,Qin Zhixin¹,Yang Xuelin¹,Wang Xinqiang¹²³,Ge Weikun¹,Shen Bo¹²³

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Abstract

Surface kinetics in Al-rich AlGaN growth are regulated to realize a growth window allowing a higher rate as well as a lower temperature. Hence a rate of 2.3 μm h−1 at 1050 °C is achieved for n-Al0.55Ga0.45N with the typical step-terrace morphology.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Special Project for Research and Development in Key areas of Guangdong Province

Major Scientific and Technological Innovation Project of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE00362G

Reference30 articles.