High power UVB light emitting diodes with optimized n-AlGaN contact layers-Reference-Cited by-同舟云学术

High power UVB light emitting diodes with optimized n-AlGaN contact layers

Published:2019-04-16 Issue:SC Volume:58 Page:SCCC02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Knauer Arne,Kolbe Tim,Rass Jens,Cho Hyun Kyong,Netzel Carsten,Hagedorn Sylvia,Lobo-Ploch Neysha,Jan Ruschel ,Glaab Johannes,Einfeldt Sven,Weyers Markus

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SC/a=SCCC02/pdf

Reference40 articles.

1. 290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles

2. III-Nitride Ultraviolet Emitters

3. AlGaN deep ultraviolet LEDs on bulk AlN substrates

4. 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

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