Atomic layer deposition of silicon oxide films using bis(dimethylaminomethylsilyl)trimethylsilylamine and ozone: first-principles and experimental study-Reference-Cited by-同舟云学术

Atomic layer deposition of silicon oxide films using bis(dimethylaminomethylsilyl)trimethylsilylamine and ozone: first-principles and experimental study

Published:2022 Issue:45 Volume:10 Page:17377-17385
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Choi Yeongchan¹,Son Heeju¹,Khumaini Khabib¹²^ORCID,Han Hyunmin¹,Roh Hyeonsu¹,Kim Hye-Lee³^ORCID,Lee Sang-Ick⁴,Lee Won-Jun¹³^ORCID

Affiliation:

1. Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea

2. Department of Chemistry, Universitas Pertamina, Jl. Teuku Nyak Arief, Simprug, Jakarta 12220, Indonesia

3. Metal-organic Compounds Materials Research Center, Sejong University, Seoul, 05006, Republic of Korea

4. DNF Co. Ltd., 142 Daehwa-ro 132 beon-gil, Daedeok-gu, Daejeon 34366, Republic of Korea

Abstract

We report high growth rates of the atomic layer deposition of silicon oxide films using a chlorine-free silylamine precursor containing three silicon atoms.

Funder

Korea Basic Science Institute

Korea Semiconductor Research Consortium

Korea Evaluation Institute of Industrial Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC03555C

Reference39 articles.

1. H.Xiao , Introduction to Semiconductor Manufacturing Technology , SPIE Press , Bellingham , 2nd edn, 2012

2. Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

3. Review—Atomic Layer Deposition of Silicon Dioxide Thin Films

4. M.Ritala and J.Niinistö , Chemical Vapour Deposition: Precursors, Processes and Applications , Royal Society of Chemistry , Cambridge , 2009 , pp. 158–206

5. C. S.Hwang , S. K.Kim and S. W.Lee , Atomic Layer Deposition for Semiconductors , Springer US , Boston, MA , 2014 , pp. 73–122

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth Mechanism of Ge2Sb2Te5 Thin Films by Atomic Layer Deposition Supercycles of GeTe and SbTe;Surfaces and Interfaces;2024-09

2. High-temperature atomic layer deposition of silicon oxide films using Tris(dimethylamino)silane and ozone;Ceramics International;2024-08

3. Remote plasma chemical vapor deposition of silicon oxycarbide film with a styrene-containing precursor and in situ O2 plasma treatment;Thin Solid Films;2024-06