Mass-Production Memories (DRAM and Flash)-Reference-Cited by-同舟云学术

Mass-Production Memories (DRAM and Flash)

Published:2013-10-19 Issue: Volume: Page:73-122
ISSN:
Container-title:Atomic Layer Deposition for Semiconductors
language:
Short-container-title:

Author:

Hwang Cheol Seong,Kim Seong Keun,Lee Sang Woon

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4614-8054-9_4

Reference150 articles.

1. Ranganathan P (2011) Computer 44:39

2. Mayer M (2009) The Physics of Data. Xerox PARC Forum Distinguished Lecture. www.parc.com/event/936/innovation-at-google.html

3. Waser R (2008) Nanotechnology. Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim

4. Kim JY, Lee CS, Kim SE, Chung IB, Choi YM, Park BJ, Lee JW, Kim DI, Hwang YS, Hwang DS, Hwang HK, Park JM, Kim DH, Kang NJ, Cho MH, Jeong MY, Kim HJ, Han JN, Kim SY, Nam BY, Park HS, Chung SH, Lee JH, Park JS, Kim HS, Park YJ, Kim K (2003), Symposium on VLSI technology, Digest of Technical Papers, p 11

5. Kim K (2005) International electron devices meeting, IEDM Technical Digest, p 323

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of silicon oxide films using bis(dimethylaminomethylsilyl)trimethylsilylamine and ozone: first-principles and experimental study;Journal of Materials Chemistry C;2022

2. Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications;IEEE Electron Device Letters;2021-04

3. Low Subthreshold Swing and High Performance of Ultrathin PEALD InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2021-04

4. Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2;The Journal of Chemical Physics;2019-11-28

5. Precision Interface Engineering of an Atomic Layer in Bulk Bi2Te3 Alloys for High Thermoelectric Performance;ACS Nano;2019-06-05