All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment-Reference-Cited by-同舟云学术

All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

Published:2018 Issue:2 Volume:6 Page:249-256
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tak Young Jun¹²³⁴,Kim Si Joon⁵⁶⁷⁸,Kwon Sera⁹¹⁰¹¹¹²,Kim Hee jun¹²³⁴,Chung Kwun-Bum⁹¹⁰¹¹¹²,Kim Hyun Jae¹²³⁴^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering

2. Yonsei University

3. Seoul 120-749

4. Republic of Korea

5. Department of Materials Science and Engineering

6. The University of Texas at Dallas

7. Richardson

8. USA

9. Division of Physics and Semiconductor Science

10. Dongguk University

11. Seoul, 100-715

12. Korea

Abstract

An all-sputtered oxide TFT process combined with simultaneous ultraviolet and thermal (SUT) treatment for consecutive fabrication processes at low temperatures.

Funder

Ministry of Education, Science and Technology

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC04642A

Reference19 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

3. Passivating chemical vapor deposited graphene with metal oxides for transfer and transistor fabrication processes

4. Review of solution-processed oxide thin-film transistors

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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