Integration of large single-grain Pb(Zr,Ti)O3 into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display-Reference-Cited by-同舟云学术

Integration of large single-grain Pb(Zr,Ti)O3 into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display

Published:2014 Issue:88 Volume:4 Page:47564-47569
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Park Jae Hyo¹²³⁴,Byun Chang Woo¹²³⁴,Lee Yong Woo¹²³⁴,Kim Hyung Yoon¹²³⁴,Son Se Wan⁵⁶⁷⁸⁹,Ahn Donghwan¹⁰¹¹⁴,Joo Seung Ki¹²³⁴

Affiliation:

1. Research Institute of Advanced Materials

2. Seoul National University

3. Department of Material Science and Engineering

4. Seoul, Republic of Korea

5. Samsung

6. Display

7. Display R&D Center

8. B/P Process Develop Team

9. Yongin, Republic of Korea

10. Kookmin University

11. Department of Advanced Materials Engineering

Abstract

A large single-grain Pb(Zr,Ti)O₃ (PZT) film was integrated into low-temperature polycrystalline silicon (poly-Si) thin-film transistors fabricated on a glass substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA08974J

Reference39 articles.

1. The electrical properties of polycrystalline silicon films

2. Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low‐temperature processing

3. Conductivity behavior in polycrystalline semiconductor thin film transistors

4. Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors

5. High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

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