Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga2O3/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector-Reference-Cited by-同舟云学术

Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga2O3/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector

Published:2021 Issue:41 Volume:9 Page:14788-14798
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yan Zuyong¹^ORCID,Li Shan¹^ORCID,Yue Jianying¹,Ji Xueqiang¹,Liu Zeng²^ORCID,Yang Yongtao¹,Li Peigang¹,Wu Zhenping¹^ORCID,Guo Yufeng²,Tang Weihua¹²^ORCID

Affiliation:

1. Laboratory of Information Functional Materials and Devices, chool of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

2. College of Electronic and Optical Engineering & College of Microelectronics, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Abstract

The spiro-MeOTAD/Ga2O3/Si p–i–n structure was developed for a high-sensitivity solar-blind UV photodetector.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

State Key Laboratory of Information Photonics and Optical Communications

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03359J