Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer-Reference-Cited by-同舟云学术

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

Published:2021 Issue:7 Volume:9 Page:2550-2560
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Sungho¹²³⁴,Kim Byung Jun¹²³⁴,Kim Tae Yeon¹²³⁴,Jung Eui Young¹²³⁴,Lee Kyu-Myung⁵²⁶⁴,Hong Jong-Am⁵²⁶⁴,Jeon Woojin¹²³⁴^ORCID,Park Yongsup⁵²⁶⁴^ORCID,Kang Seong Jun¹²³⁴^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics (BK21 four)

2. Kyung Hee University

3. Yongin 17101

4. Republic of Korea

5. Department of Physics and Research Institute for Basic Sciences

6. Seoul 02447

Abstract

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al₂O₃) to quantum dot (QD)/zinc oxide (ZnO) films.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05626J

Reference48 articles.

1. Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film Transistors

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices