Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias-Reference-Cited by-同舟云学术

Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias

Published:2015 Issue:47 Volume:3 Page:12220-12229
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhao Jie¹²³⁴,Cheng Baochang¹²³⁴⁵,Xiao Yanhe¹²³⁴,Guo Rui¹²³⁴,Lei Shuijin¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Nanchang University

3. Jiangxi 330031

4. P. R. China

5. Nanoscale Science and Technology Laboratory

Abstract

Nonvolatile multibit sensor and memory written/erased by temperature or bias is realized in two-terminal device based on individual ZnO : K, Cl micro/nanowire.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02824H

Reference45 articles.

1. FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

2. Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

3. Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

4. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

5. Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires

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