Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes-Reference-Cited by-同舟云学术

Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

Published:2013-06-05 Issue:6 Volume:7 Page:5360-5366
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tsai Cheng-Lin¹,Xiong Feng¹,Pop Eric¹,Shim Moonsub¹

Affiliation:

1. Department of Materials Science and Engineering, ‡Frederic Seitz Materials Research Laboratory, §Department of Electrical and Computer Engineering, ∥Micro and Nanotechnology Laboratory, and ⊥Beckman Institute, University of Illinois, Urbana, Illinois 61801, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn401212p

Reference39 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Metal–Oxide RRAM

3. Scaling limits of resistive memories

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

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