Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires-Reference-Cited by-同舟云学术

Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires

Published:2011-10-13 Issue:11 Volume:11 Page:4601-4606
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

He Li¹,Liao Zhi-Min¹,Wu Han-Chun²,Tian Xiao-Xue³,Xu Dong-Sheng³,Cross Graham L. W.²,Duesberg Georg S.⁴,Shvets I. V.²,Yu Da-Peng¹

Affiliation:

1. State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, People’s Republic of China

2. CRANN and School of Physics, Trinity College Dublin, Dublin 2, Ireland

3. Institute of Physical Chemistry, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, Peking University, Beijing 100871, People’s Republic of China

4. CRANN and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202017k

Reference36 articles.

1. Reproducible resistance switching in polycrystalline NiO films

2. Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

3. Electrically driven phase transition in magnetite nanostructures

4. High-Density Crossbar Arrays Based on a Si Memristive System

5. Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches

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