Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2982426
Reference16 articles.
1. Reproducible resistance switching in polycrystalline NiO films
2. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
3. Resistance switching of copper doped MoOx films for nonvolatile memory applications
4. Resistance switching in the metal deficient-type oxides: NiO and CoO
Cited by 88 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Printed and flexible organic and inorganic memristor devices for non-volatile memory applications;Journal of Physics D: Applied Physics;2023-09-28
2. Optical and structural properties of gradient (Ti,Co)Ox thin-film coatings with a resistive switching effect;Applied Optics;2022-11-30
3. Reliable high work-function molybdenum dioxide synthesis via template-effect-utilizing atomic layer deposition for next-generation electrode applications;Journal of Materials Chemistry C;2022
4. Study of resistive switching, photoresponse, and magnetism modulation in the Pt/Co3O4/Nb:SrTiO3 heterostructure;Applied Physics Letters;2021-04-12
5. Investigation of FePt electrode induced influence on resistive switching characteristics of SiO2-based RRAM;Journal of Materials Science: Materials in Electronics;2020-09-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3