Point contact resistive switching memory based on self-formed interface of Al/ITO
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep29347.pdf
Reference38 articles.
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3. Yang, Y. C. & Lu, W. Nanoscale resistive switching devices: mechanisms and modeling. Nanoscale. 5, 10076–10092 (2013).
4. Meijer, G. I. Who wins the nonvolatile memory race? Science. 319, 1625–1626 (2008).
5. Jeong, D. S. et al. Emerging memories: resistive switching mechanisms and current status. Rep. Prog. Phys. 75, 076502–076532 (2012).
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