Characterization of defect levels in β-Ga2O3 single crystals doped with tantalum-Reference-Cited by-同舟云学术

Characterization of defect levels in β-Ga2O3 single crystals doped with tantalum

Published:2021 Issue:15 Volume:23 Page:2835-2841
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liu Haoyue¹²³⁴⁵,Zhang Naiji¹²³⁴⁵,Yin Junhua¹²³⁴⁵,Xia Changtai⁶⁷⁸⁹¹⁰^ORCID,Feng Zhe Chuan¹²³⁴⁵,He Kaiyan¹²³⁴⁵,Wan Lingyu¹²³⁴⁵^ORCID,Mohamed H. F.⁶⁷⁸⁹¹⁰^ORCID

Affiliation:

1. Laboratory of Optoelectronic Materials & Detection Technology

2. Guangxi Key Laboratory for the Relativistic Astrophysics

3. School of Physical Science & Technology

4. Guangxi University

5. Nanning 530004

6. Key Laboratory of Materials for High Power Laser

7. Shanghai Institute of Optics and Fine Mechanics

8. Chinese Academy of Sciences

9. Shanghai 201800

10. China

Abstract

Optical properties and defect characterization of Ta-doped β-Ga₂O₃ single crystals grown by the optical floating zone method.

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01639J

Reference35 articles.

1. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals

2. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

3. Growth and fundamentals of bulk β-Ga2O3 single crystals

4. High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

5. Current status of Ga2O3power devices

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