Nearly perfect GaN crystal via pit-assisted growth by HVPE
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE00246G
Reference19 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Epitaxial growth of GaN films on lattice-matched ScAlMgO4substrates
3. Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes
4. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
5. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
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