Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2013/CE/C3CE40219C
Reference17 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Defect structure in selectively grown GaN films with low threading dislocation density
3. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
4. MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement
5. A Two-Step Method for Epitaxial Lateral Overgrowth of GaN
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