Thick GaN growth via GaN nanodot formation by HVPE
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CE/C6CE02125E
Reference27 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Epitaxial growth of GaN films on lattice-matched ScAlMgO4substrates
3. Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes
4. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
5. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate
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1. Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties;CrystEngComm;2023
2. Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy;Applied Surface Science;2020-10
3. Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy;Scientific Reports;2020-02-07
4. Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth;CrystEngComm;2020
5. A study on the nitridation of GaN crystal growth by HYPE method;J KOR CRYST GROWTH C;2019
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