Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching-Reference-Cited by-同舟云学术

Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching

Published:2016 Issue:36 Volume:6 Page:30468-30473
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Cowley A.¹²³⁴⁵,Steele J. A.⁶⁷⁸⁹¹⁰,Byrne D.¹¹³⁴⁵,Vijayaraghavan R. K.¹²³⁴⁵,McNally P. J.¹²³⁴⁵

Affiliation:

1. Nanomaterials Processing Laboratory

2. School of Electronic Engineering

3. Dublin City University

4. Dublin 9

5. Ireland

6. Institute for Superconducting and Electronic Materials

7. School of Physics

8. University of Wollongong

9. Wollongong

10. Australia

11. School of Physical Sciences

Abstract

We present a low-cost fabrication procedure for the production of nanoscale periodic GaAs nanopillar arrays, using the nanosphere lithography technique as a templating mechanism and the electrochemical metal assisted etch process (MacEtch).

Funder

Enterprise Ireland

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA23621E

Reference30 articles.

1. Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics

2. Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays

3. Fabrication of antireflective layers on silicon using metal-assisted chemical etching with in situ deposition of silver nanoparticle catalysts

4. Metal-Assisted Chemical Etching of Silicon: A Review

5. Periodic GaAs Convex and Hole Arrays Produced by Metal-Assisted Chemical Etching

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