A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors-Reference-Cited by-同舟云学术

A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

Published:2016 Issue:44 Volume:4 Page:10486-10493
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Seul Hyeon Joo¹²³⁴,Kim Hyun-Gwan⁵⁶⁷⁴,Park Man-Young⁵⁶⁷⁴,Jeong Jae Kyeong¹²³⁴

Affiliation:

1. Department of Electronic Engineering

2. Hanyang University

3. Seoul 133-791

4. South Korea

5. Research Center for Nano-Materials

6. DNF Co. Ltd.

7. Daejeon 306-802

Abstract

A facile route for the preparation of a solution-processed silicon oxide dielectric from perhydropolysilazane (PHPS) at a low temperature (≤150 °C) is proposed.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03725A

Reference44 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Transparent thin-film transistors with zinc indium oxide channel layer

5. Direct Light Pattern Integration of Low-Temperature Solution-Processed All-Oxide Flexible Electronics

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