Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition-Reference-Cited by-同舟云学术

Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition

Author:

Zheng Li¹²³⁴⁵,Cheng Xinhong¹²³⁴⁵,Yu Yuehui¹²³⁴⁵,Xie Yahong⁶⁷⁸⁹,Li Xiaolong¹⁰¹¹⁵,Wang Zhongjian¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics

2. Institute of Microsystem and Information Technology

3. Chinese Academy of Sciences

4. Shanghai 200050

5. P. R. China

6. Department of Materials Science and Engineering

7. University of California Los Angeles

8. California 90095

9. USA

10. Shanghai Synchrotron Radiation Facility

11. Shanghai 200061

Abstract

Al₂O₃-doped HfO₂ with both amorphous state and high relative permittivity was directly deposited on graphene by atomic layer deposition.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference38 articles.

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