Nanoscale phase change memory materials
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2012/NR/C2NR30541K
Reference58 articles.
1. Resonant bonding in crystalline phase-change materials
2. Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5
3. Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
4. Phase change materials and their application to random access memory technology
5. Crystallization Behavior and Physical Properties of Sb-Excess Ge[sub 2]Sb[sub 2+x]Te[sub 5] Thin Films for Phase Change Memory (PCM) Devices
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