Phase change materials and their application to random access memory technology-Reference-Cited by-同舟云学术

Phase change materials and their application to random access memory technology

Published:2008-12 Issue:12 Volume:85 Page:2330-2333
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Raoux Simone,Shelby Robert M.,Jordan-Sweet Jean,Munoz Becky,Salinga Martin,Chen Yi-Chou,Shih Yen-Hao,Lai Erh-Kun,Lee Ming-Hsiu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

2. Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5Thin Films

3. Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5Thin Film

4. Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials

5. Low-cost and nanoscale non-volatile memory concept for future silicon chips

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