Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition-Reference-Cited by-同舟云学术

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

Published:2016 Issue:28 Volume:4 Page:6864-6872
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim K. D.¹²³⁴,Park M. H.¹²³⁴⁵,Kim H. J.¹²³⁴,Kim Y. J.¹²³⁴,Moon T.¹²³⁴,Lee Y. H.¹²³⁴,Hyun S. D.¹²³⁴,Gwon T.¹²³⁴,Hwang C. S.¹²³⁴

Affiliation:

1. Department of Material Science & Engineering and Inter-University Semiconductor Research Center

2. Seoul National University

3. Seoul 151-744

4. South Korea

5. NaMLab gGmbH

Abstract

The evolution of ferroelectricity in undoped-HfO₂ thin films is systematically studied by controlling the deposition temperature during atomic layer deposition.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC02003H

Reference48 articles.

1. Ferroelectricity in hafnium oxide thin films

2. J. Müller , E.Yurchuk, J.Paul, R.Hoffmann, S.Müller, D.Martin, S.Slesazeck, P.Polakowski, J.Sundqvist, M.Czernohorsky, K.Seidel, P.Kücher, R.Boschke, M.Trentzsch, K.Gebauer, U.Schröder and T.Mikolajick, in Symp. on VLSI Technology Digest of Technical Papers, 2012, 25

3. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

4. Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

5. Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

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