High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers-Reference-Cited by-同舟云学术

High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers

Published:2016 Issue:2 Volume:45 Page:484-488
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Wang Cheng¹²³⁴⁵,Chen Yu¹²³⁴⁵,Zhang Bin¹²³⁴⁵,Liu Shanshan¹²³⁴⁵,Chen Qibin¹²³⁴⁵,Cao Yaming¹²³⁴⁵,Sun Sai¹²³⁴⁵

Affiliation:

1. Key Laboratory for Advanced Materials

2. School of Chemistry and Molecular Engineering

3. East China University of Science and Technology

4. Shanghai 200237

5. China

Abstract

The as-fabricated ITO/CH₃NH₃PbI₃:PVK/Al bulk heterojunction device exhibited a nonvolatile write-once read-many-times memory effect, with a maximum ON/OFF current ratio exceeding 10³and a turn-on voltage of −1.57 V.

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/DT/C5DT03969J

Reference33 articles.

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2. CH3NH3PbX3, ein Pb(II)-System mit kubischer Perowskitstruktur / CH3NH3PbX3, a Pb(II)-System with Cubic Perovskite Structure

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4. Modeling Materials and Processes in Hybrid/Organic Photovoltaics: From Dye-Sensitized to Perovskite Solar Cells

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